Tim McDonald, International Rectifier's vice president of Emerging Technologies, notes that silicon-based HEXFETs, Trench MOSFETs, and Super Junction MOSFETs have evolved over three decades, gaining ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN ®) power FETs and ICs, expands the selection of low voltage, ...

Wide-bandgap semiconductors are an attractive material for power devices due to low losses, improved temperature capability, and high thermal conductivity. Compared to silicon (Si), with a larger ...

Matsushita's novel technology achieves a low-cost, low-loss fast switching device with 1/10 on-state resistance of Si power MOS Matsushita Electric Industrial Co., Ltd., best known for its Panasonic ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...

This latest release is, according to Nexperia, intended to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs will address multiple ...

The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...

The LMG3410 70-mΩ, 600-V GaN FET power-stage is the first high-voltage driver-integrated GaN solution. The power stage delivers 50% lower power losses in a totem-pole PFC compared with ...

About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology. At the time, some thought that ...

A 15V gallium nitride (GaN) FET has been added to the eGaN offering from Efficient Power Conversion (EPC). The automotive-qualified EPC2216 is designed for lidar applications in self-driving cars and ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

Distributor Farnell is now shipping Nexperia’s power GaN FETs. The FETs can be used in hard switching for AC-DC totem pole power factor correction (PFC) applications, LLC phase shift full-bridge ...