Researchers have realized a f<sub>T</sub>/f<sub>MAX</sub> 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser, moving it an important step closer to ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser. "We have shown that the transistor laser, ...
Researchers in the US claim to have fabricated a transistor that bridges the worlds of optics and electronics. “We have demonstrated light emission from the base layer of a heterojunction bipolar ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
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