EDN

Fundamentals of Field Effect Transistor

In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Nature

Gate Dielectrics and Electrical Properties in Field-Effect Transistors

The operation of field‐effect transistors (FETs) critically depends on the performance of gate dielectrics, which act as the insulating medium between the gate electrode and the semiconducting channel ...
Nature

Field-Effect Transistor Technology

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...
Interesting Engineering on MSN

China claims to develop world’s smallest and most energy-efficient transistor

Researchers at Peking University in China have developed the world’s smallest and most energy-efficient ...
EDN

IGBT Primer

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
AZoNano

Using Graphene Field Effect Transistors in Biosensors

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
Semiconductor Engineering

Introducing Nanosheets Into Complementary-Field Effect Transistors (CFETs)

In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D) to benchmark different process integration options for Complementary-FET (CFET) fabrication. CFET is a CMOS ...
AZOM

Metal Halide Perovskite Semiconductors and the Creation of Field-Effect Transistors

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...
The Financial

Panasonic Develops Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
AZoNano

What is a Graphene Field Effect Transistor?

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Forbes

The Field Effect Transistor Centennial And My Final IEEE Event

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...