As 3D NAND continues to scale vertically — all in the name of increasing capacity and speed and reducing inefficiency and cost — maintaining channel hole critical dimension (CD) and shape uniformity ...
WILMINGTON, Mass.--(BUSINESS WIRE)--Onto Innovation Inc. (NYSE: ONTO) today announced the availability of a suite of process control metrology solutions for advanced device manufacturing. The suite of ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
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