TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
TOKYO — Renesas Technology Corp. has developed a new SRAM memory cell combining SRAM and DRAM technologies. The new cell is about half the size of conventional SRAM cells but retains such advantages ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
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